RF081M2S ROHM Co. Ltd., RF081M2S Datasheet
RF081M2S
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RF081M2S Summary of contents
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... Max. － 0.83 0.95 － 0.86 0.98 － 0.01 10 － － － 20 RF081M2S Land size figure (Unit : mm) 1.2 PMDU Structure 0.25±0.05 1.5MAX Conditions Direct voltage Glass epoxy substrate mounted 50×50mm Glass epoxy substrate mounted 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25℃ Conditions Unit I =0.8A ...
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... Irr=0.25*IR 20 n=10pcs 15 10 AVE:12.2ns 5 0 trr DISPERSION MAP 30 No break at 30kV AVE:13.6kV C=200pF C=100pF 100 R=0Ω R=1.5kΩ ESD DISPERSION MAP RF081M2S 100 f=1MHz 200 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 60 Tj=25℃ f=1MHz 55 VR=0V n=10pcs 50 AVE:51.5pF 45 40 ...
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... Io-Pf CHARACTERISTICS D=t/T D.C. VR=1６0V Tj=150℃ T 1.5 D=0.8 D=0.5 1 half sin wave D=0.2 0.5 D=0.1 D=0. 120 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) RF081M2S D=t/T VR=160V 2 Tj=150℃ T D.C. 1.5 D=0.8 D=0.5 half sin wave 1 D=0.2 0.5 D=0.1 D=0. 120 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc 150 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...