HBA114ES6R Cystech Electonics Corp., HBA114ES6R Datasheet - Page 2

• Manufacturer Part Number: HBA114ES6R
• Description: Dual Pnp Digital Transistors
• Manufacturer: Cystech Electonics Corp.

Absolute Maximum Ratings
Characteristics
HBA114ES6R
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Note : 150mW per element must not be exceeded.
Parameter
Parameter
(Each Transistor, Ta=25℃)
Symbol
V
R
V
V
I
CYStech Electronics Corp.
O(off)
G
R
2
O(on)
I(off)
f
I(on)
I
/R
T
I
1
I
1
(Each Transistor, Ta=25℃)
Min.
0.8
30
-3
7
-
-
-
-
-
Typ.
250
10
Symbol
1
-
-
-
-
-
-
I
O(max.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
Max.
-0.88
-0.5
-0.3
-0.5
1.2
13
-
-
-
MHz
Unit
mA
µA
k
V
V
V
-
-
V
V
I
V
V
V
-
V
-
O
CC
O
I
CC
O
CE
/I
=-5V
=-0.3V, I
=-5V, I
-55~+150
I
-40~+10
=-10V, I
=-5V, I
=-50V, V
=-10mA/-0.5mA
Limits
* Transition frequency of the device
-100
150
-50
-50
200
Test Conditions
O
O
=-5mA
O
C
(Note)
=-100µA
CYStek Product Specification
=-10mA
I
Spec. No. : C252S6R
Issued Date : 2003.05.27
Revised Date :
Page No. : 2/4
=-5mA, f=100MHz*
=0V
Unit
mW
mA
mA
V
V
C
C