HBA143ES6R Cystech Electonics Corp., HBA143ES6R Datasheet
HBA143ES6R
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HBA143ES6R Summary of contents
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... Transistor elements are independent, eliminating interference Complements the HBC143ES6R Equivalent Circuit HBA143ES6R TR1 1=4. 2=4 1=4. 2=4 HBA143ES6R CYStech Electronics Corp. TR2 Spec. No. : C268S6R Issued Date : 2003.05.28 Revised Date : Page No. : 1/4 SOT-363R CYStek Product Specification ...
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... Note : 150mW per element must not be exceeded. Characteristics (Each Transistor, Ta=25℃) Parameter Symbol Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency HBA143ES6R CYStech Electronics Corp. (Each Transistor, Ta=25℃) Symbol O(max.) Pd ...
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... 0.1 1 Output Current---I Power Derating Curves 250 200 Dual Single 150 100 100 Ambient Temperature---T HBA143ES6R CYStech Electronics Corp. 0.01 10 100 (mA) O 0.01 10 100 (mA) O 150 200 (℃) A Spec. No. : C268S6R Issued Date : 2003.05.28 Revised Date : Page No. : 3/4 Output Voltage vs Output Current ...
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... CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBA143ES6R CYStech Electronics Corp. Style: Pin 1 ...