HBA144ES6R Cystech Electonics Corp., HBA144ES6R Datasheet
HBA144ES6R
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HBA144ES6R Summary of contents
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... Transistor elements are independent, eliminating interference Complements the HBC144ES6R Equivalent Circuit HBA144ES6R TR1 1=47k , R 2= 1=47k , R 2= HBA144ES6R CYStech Electronics Corp. TR2 Spec. No. : C272S6R Issued Date : 2003.05.23 Revised Date : Page No. : 1/4 SOT-363R CYStek Product Specification ...
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... Note:*1. 150mW per element must not be exceeded. Characteristics (Each Transistor, Ta=25℃) Parameter Symbol Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency HBA144ES6R CYStech Electronics Corp. (Each Transistor,Ta=25℃) Symbol O(max.) Pd ...
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... Characteristics 0.1 1 Output Current ---Io(mA) Power Derating Curves 250 Dual 200 S ingle 150 100 100 Ambient Temperature---TA(℃) HBA144ES6R CYStech Electronics Corp. 1000 100 Vo=5V 10 100 100 10 Vo=0.3V 0.1 10 100 150 200 Spec. No. : C272S6R Issued Date : 2003.05.23 Revised Date : Page No. : 3/4 Output Voltage vs Output Current ...
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... CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBA144ES6R CYStech Electronics Corp. Style: Pin 1 ...