HBAW56 Hi-Sincerity Microelectronics Corp., HBAW56 Datasheet

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HBAW56

Manufacturer Part Number
HBAW56
Description
High-conductance Ultra Diode
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet
HBAW56
HIGH-CONDUCTANCE ULTRA DIODE
Description
The HBAW56 consists of two high-speed switching diodes with common anodes,
fabricated in planar technology, and encapsulated in the small plastic SMD SOT23
package.
Features
Absolute Maximum Ratings
Electrical Characteristics
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
HBAW56
Small SMD Package (SOT-23)
Ultra-high Speed
Low Forward Voltage
Fast Reverse Recovery Time
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (T
Storage Temperature ........................................................................................................................... -65 ~ +150 C
Junction Temperature .................................................................................................................................... +150 C
Total Power Dissipation (T
Reverse Voltage.................................................................................................................................................. 85 V
Repetitive Reverse Voltage ................................................................................................................................ 75 V
Forward Current............................................................................................................................................. 215 mA
Repetitive Forward Current ........................................................................................................................... 125 mA
Forward Surge Current (1ms)........................................................................................................................ 450 mA
Characteristic
HI-SINCERITY
MICROELECTRONICS CORP.
A
=25 C) ............................................................................................................... 250 mW
A
=25 C)
(T
Symbol
A
V
V
V
V
C
T
=25 C)
I
F(1)
F(2)
F(3)
F(4)
R
rr
T
I
I
I
I
V
V
I
I
F
F
F
F
F
R
=1mA
=10mA
=50mA
=150mA
=I
R
R
=1mA
=75V
=0, f=1MHz
R
=10mA, R
Condition
L
=100 , measured at
Diagram:
Spec. No. : HN200216
Issued Date : 1998.07.27
Revised Date : 2004.08.26
Page No. : 1/4
Min
HSMC Product Specification
-
-
-
-
-
-
-
SOT-23
1000
1250
Max
715
855
1
2
4
Unit
mV
mV
mV
mV
uA
pF
nS

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HBAW56 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HBAW56 HIGH-CONDUCTANCE ULTRA DIODE Description The HBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the small plastic SMD SOT23 package. Features Small SMD Package (SOT-23) Ultra-high Speed Low Forward Voltage Fast Reverse Recovery Time ...

Page 2

... Forward Biased Voltage-VF(mV) Power Derating 300 250 200 150 100 Ta Ambient Temperature HBAW56 1 0.1 1500 2000 0.1 100 120 140 160 Spec. No. : HN200216 Issued Date : 1998.07.27 Revised Date : 2004.08.26 Page No. : 2/4 Capacitance & Reverse-Biased Voltage 1 10 Reverse Biased Voltage-V ...

Page 3

... Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBAW56 Marking: A Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label ...

Page 4

... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBAW56 o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...

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