HBAV99 Hi-Sincerity Microelectronics Corp., HBAV99 Datasheet

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HBAV99

Manufacturer Part Number
HBAV99
Description
High-speed Switching Diode
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet

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HBAV99
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HBAV99
HIGH-SPEED SWITCHING DIODE
Description
The HBAV99 consists of two diodes in a plastic surface mount package. The
diodes are connected in series and the unit is designed for high-speed switching
application in hybrid thick and thin-film circuits.
Features
Absolute Maximum Ratings
Electrical Characteristics
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
HBAV99
Small SMD Package (SOT-23)
Ultra-high Speed
Low Forward Voltage
Fast Reverse Recovery Time
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (T
Storage Temperature ........................................................................................................................... -65 ~ +150 C
Junction Temperature .................................................................................................................................... +150 C
Total Power Dissipation (T
Reverse Voltage.................................................................................................................................................. 70 V
Repetitive Reverse Voltage ................................................................................................................................ 70 V
Forward Current............................................................................................................................................. 150 mA
Repetitive Forward Current............................................................................................................................ 500 mA
Forward Surge Current (1ms)...................................................................................................................... 1000 mA
Characteristic
HI-SINCERITY
MICROELECTRONICS CORP.
A
=25 C) ............................................................................................................... 250 mW
A
=25 C)
(T
Symbol
A
=25 C)
V
V
V
V
V
C
T
I
(BR)
F(1)
F(2)
F(3)
F(4)
R
rr
T
I
I
I
I
I
V
V
I
I
R
F
F
F
F
F
R
=1mA
=10mA
=50mA
=150mA
R
R
=I
=100uA
=1mA
=70
=0, f=1MHz
R
=10mA, R
Condition
L
=100 , measured at
Diagram:
Min
Spec. No. : HE6834
Issued Date : 1998.02.01
Revised Date : 2004.08.26
Page No. : 1/4
HSMC Product Specification
70
-
-
-
-
-
-
-
SOT-23
1000
1250
Max
715
855
2.5
1.5
6
-
Unit
mV
mV
mV
mV
uA
pF
nS
V

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HBAV99 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HBAV99 HIGH-SPEED SWITCHING DIODE Description The HBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits. Features Small SMD Package (SOT-23) ...

Page 2

... Forward Biased Voltage-VF (mV) Power Derating 300 250 200 150 100 Ta Ambient Temperature HBAV99 1 0.1 0.1 1500 2000 100 120 140 160 Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2004.08.26 Page No. : 2/4 Capacitance & Reverse-Biased Voltage 1 10 Reverse Biased Voltage-V ...

Page 3

... Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBAV99 Marking: A Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label ...

Page 4

... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBAV99 o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...

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