HBAV70 Hi-Sincerity Microelectronics Corp., HBAV70 Datasheet

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HBAV70

Manufacturer Part Number
HBAV70
Description
Switching Diode
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet

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HBAV70
SWITCHING DIODE
Description
The HBAV70 consists of two diodes in a plastic surface mount package. The
diodes are connected in series and the unit is designed for high-speed switching
application in hybrid thick and thin-film circuits.
Features
Absolute Maximum Ratings
Electrical Characteristics
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
HBAV70
Small SMD Package (SOT-23)
Ultra-high Speed
Low Forward Voltage
Fast Reverse Recovery Time
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (T
Storage Temperature ........................................................................................................................... -65 ~ +150 C
Junction Temperature .................................................................................................................................... +150 C
Total Power Dissipation (T
Reverse Voltage.................................................................................................................................................. 70 V
Forward Current............................................................................................................................................. 200 mA
Repetitive Forward Current............................................................................................................................ 500 mA
Characteristic
HI-SINCERITY
MICROELECTRONICS CORP.
A
=25 C) ............................................................................................................... 250 mW
A
=25 C)
(T
A
=25 C)
Symbol
V
V
V
V
V
C
T
I
(BR)
F(1)
F(2)
F(3)
F(4)
R
rr
T
I
I
I
I
I
V
V
I
I
R
F
F
F
F
F
R
=1mA
=10mA
=50mA
=100mA
=I
=100uA
R
R
=1mA, V
=70
=0, f=1MHz
R
=10mA, R
R
=5V
Condition
L
=100 , measured at
Diagram:
Spec. No. : HE6801
Issued Date : 1995.11.17
Revised Date : 2004.08.26
Page No. : 1/4
HSMC Product Specification
Min
70
-
-
-
-
-
-
-
SOT-23
1300
1100
Max
715
855
1.5
15
5
-
Unit
mV
mV
mV
mV
uA
pF
nS
V

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HBAV70 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HBAV70 SWITCHING DIODE Description The HBAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits. Features Small SMD Package (SOT-23) Ultra-high Speed ...

Page 2

... HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Forward Biased Voltage & Forward Current 450 300 150 0 0 500 1000 Forward Biased Voltage-VF (mV) HBAV70 1 0.1 1500 2000 0.1 Spec. No. : HE6801 Issued Date : 1995.11.17 Revised Date : 2004.08.26 Page No. : 2/4 Capacitance & Reverse-Biased Voltage 1 10 Reverse-Biased Voltage-V (V) R HSMC Product Specification ...

Page 3

... Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBAV70 Marking: A Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label ...

Page 4

... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBAV70 o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...

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