HBAS16 Hi-Sincerity Microelectronics Corp., HBAS16 Datasheet
HBAS16
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HBAS16 Summary of contents
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... HI-SINCERITY MICROELECTRONICS CORP. HBAS16 HIGH-SPEED SWITCHING DIODE Description The HBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package. Features Small SMD Package (SOT-23) Low Forward Voltage ...
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... HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Forward Biased Voltage & Forward Current 450 300 150 0 0 500 1000 Forward Biased Voltage-V HBAS16 1 0.1 1500 2000 0.1 (mV) F Spec. No. : HE6833 Issued Date : 1994.05.27 Revised Date : 2004.08.26 Page No. : 2/4 Capacitance & Reverse-Biased Voltage 1 10 Reverse Biased Voltage-V ...
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... Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBAS16 Marking: A Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label ...
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... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBAS16 o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...