V80100P Vishay, V80100P Datasheet - Page 3

• Manufacturer Part Number: V80100P
• Description: Dual High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

Document Number 88979
22-Aug-06
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
0.001
Figure 3. Maximum Non-Repetitive Peak Forward Surge
100
0.01
600
500
400
300
200
100
100
0.1
10
0.1
10
Figure 5. Typical Reverse Characteristics Per Diode
0
1
1
10
0
1
T
Percent of Rated Peak Reverse Voltage (%)
J
20
= 150 °C
T
J
Instantaneous Forward Voltage (V)
0.2
= 125 °C
30
Number of Cycles at 60 Hz
Current Per Diode
40
T
J
0.4
= 150 °C
T
T
8.3 ms Single Half Sine-Wave
J
50
J
= 125 °C
= T
10
T
J
T
J
60
max.
J
= 25 °C
0.6
= 25 °C
70
80
0.8
90
100
1.0
100
10000
Figure 7. Typical Transient Thermal Impedance Per Diode
1000
100
0.1
10
1
Figure 6. Typical Junction Capacitance Per Diode
0.01
0.1
Vishay General Semiconductor
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
Junction to Case
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
V80100P
www.vishay.com
100
100
3