MA5J002E Panasonic Corporation of North America, MA5J002E Datasheet
MA5J002E
Manufacturer Part Number
MA5J002E
Description
Silicon Epitaxial Planar Type For High Speed Switching Circuits
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA5J002E.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MA5J002EOL
Manufacturer:
OKI
Quantity:
200
Part Number:
MA5J002EOL
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Switching Diodes
MA5J002E
Silicon epitaxial planar type
For high speed switching circuits
■ Features
■ Absolute Maximum Ratings T
Note) * 1: Value in single diode used.
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
Publication date: November 2003
• Includes 4 elements of cathode common connection
• Parts reduction is possible
• Ideal for surge voltage absorption
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
surge current
Junction temperature
Operating ambient temperature
Storage temperature
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
* 2: t = 1 s
2. Absolute frequency of input and output is 100 MHz.
3. * : t
Parameter
rr
Parameter
measurement circuit
* 1, 2
* 1
Pulse Generator
(PG-10N)
R
s
= 50 Ω
* 1
*
Bias Application Unit N-50BU
A
Symbol
V
I
T
I
T
V
FSM
T
I
FM
RM
opr
a
stg
F
R
j
Symbol
= 25°C ± 3°C
Wave Form Analyzer
(SAS-8130)
R
a
V
V
i
C
I
t
= 50 Ω
R
rr
= 25°C
R
F
t
−25 to +105
−55 to +150
Rating
100
225
500
150
80
80
I
I
V
V
I
I
F
R
F
rr
R
R
= 10 mA, V
= 100 mA
= 100 µA
= 0.1 I
SKF00061BED
= 75 V
= 0 V, f = 1 MHz
R
Unit
, R
mA
mA
mA
°C
°C
°C
V
V
Conditions
L
R
V
= 100 Ω
= 6 V
R
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: M5B
Internal Connection
5˚
t
(0.65) (0.65)
5
1
2.0
±0.1
I
1: Anode 1
2: Cathode 1, 2, 3, 4
2
F
Min
80
I
V
R
Output Pulse
F
L
R
= 10 mA
4
3
= 100 Ω
0.2
= 6 V
5
1
±0.05
t
Typ
I
rr
2
rr
= 0.1 I
4
3
SMini5-F 1 Package
t
R
Max
100
1.2
2
3
3: Anode 2
4: Anode 3
5: Anode 4
Unit: mm
0.16
0.7
Unit
±0.1
nA
pF
ns
V
V
+0.1
–0.06
1
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MA5J002E Summary of contents
Page 1
... Switching Diodes MA5J002E Silicon epitaxial planar type For high speed switching circuits ■ Features • Includes 4 elements of cathode common connection • Parts reduction is possible • Ideal for surge voltage absorption ■ Absolute Maximum Ratings T Parameter Symbol Reverse voltage V Maximum peak reverse voltage ...
Page 2
... MA5J002E 150° 100°C 25°C 10 −20°C 1 −1 10 −2 10 − 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage V ( 150° 100° 25° − ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...