HD1A3M Renesas Electronics Corporation., HD1A3M Datasheet - Page 3

• Manufacturer Part Number: HD1A3M
• Description: On-chip Resistor Npn Silicon Epitaxial Transistor For Mid-speed Switching
• Manufacturer: Renesas Electronics Corporation.

HD1A4M
ELECTRICAL CHARACTERISTICS (T
Note PW ≤ 350
HD1L2Q
ELECTRICAL CHARACTERISTICS (T
Note PW ≤ 350
HD1F2Q
ELECTRICAL CHARACTERISTICS (T
Note PW ≤ 350
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Parameter
Parameter
Parameter
μ
μ
μ
s, duty cycle ≤ 2 %
s, duty cycle ≤ 2 %
s, duty cycle ≤ 2 %
Symbol
h
h
h
Symbol
h
h
h
Symbol
h
h
h
V
V
V
V
V
V
FE1
FE2
FE3
FE1
FE2
FE3
FE1
FE2
FE3
OL
OL
OL
I
I
I
IL
IL
IL
CBO
R
R
CBO
R
R
CBO
R
R
Note
Note
Note
1
2
1
2
1
2
Note
Note
Note
Note
Note
Note
Note
Note
Note
Note
Note
Note
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CB
CE
CE
CE
IN
CE
CB
CE
CE
CE
IN
CE
CB
CE
CE
CE
IN
CE
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
= 60 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
= 60 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
= 60 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
A
A
A
= 25°C)
= 25°C)
= 25°C)
E
E
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
= 0
= 0
= 0
= 0.1 A
= 0.8 A
= 0.8 A
Data Sheet D16182EJ4V0DS
= 0.1 A
= 0.5 A
= 1.0 A
= 100
= 0.1 A
= 0.5 A
= 1.0 A
= 100
= 0.1 A
= 0.5 A
= 1.0 A
= 100
Conditions
Conditions
Conditions
μ
μ
μ
A
A
A
MIN.
MIN.
MIN.
3.29
1.54
200
300
200
200
300
200
329
100
300
200
154
7
7
TYP.
TYP.
TYP.
470
220
4.7
2.2
10
10
MAX.
MAX.
MAX.
6.11
2.86
100
100
611
100
286
0.2
0.3
0.5
0.3
0.5
0.3
13
13
HD1 SERIES
Unit
Unit
Unit
nA
kΩ
kΩ
nA
kΩ
nA
kΩ
V
V
V
V
Ω
V
V
Ω
−
−
−
−
−
−
−
−
−
3