MRF7S15100H Freescale Semiconductor, Inc, MRF7S15100H Datasheet - Page 3

• Manufacturer Part Number: MRF7S15100H
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 90 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Average Deviation from Linear Phase in 40 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
@ P
f = 1490 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
@ 1 dB Compression Point, CW
out
= 100 W CW
`
30 dBc
out
Characteristic
= 100 W CW, f = 1490 MHz
out
where IMD Third Order
(T
out
C
out
= 25°C unless otherwise noted)
= 23 W Avg.
= 100 W CW,
DD
= 28 Vdc, I
Symbol
(continued)
VBW
IMD
ΔP1dB
Delay
P1dB
ΔΦ
ΔG
G
Φ
sym
F
DQ
res
= 600 mA, 1470 - 1510 MHz Bandwidth
Min
—
—
—
—
—
—
—
—
—
MRF7S15100HR3 MRF7S15100HSR3
0.010
0.007
Typ
100
0.2
4.5
1.9
40
70
23
Max
—
—
—
—
—
—
—
—
—
dB/°C
W/°C
MHz
MHz
Unit
dB
W
ns
°
°
3