BB1 Renesas Electronics Corporation., BB1 Datasheet - Page 2

• Manufacturer Part Number: BB1
• Description: Compound Transistor On-chip Resistor Npn Silicon Epitaxial Transistor For Mid-speed Switching
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
Note 1 PW ≤ 10 ms, duty cycle ≤ 50 %
BB1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
Note 2 PW ≤ 350 µ s, duty cycle ≤ 2 %
BB1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
Note 2 PW ≤ 350 µ s, duty cycle ≤ 2 %
2
Collector to base volgate
Colletor to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Collector cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
Input resistance
E-to-B resistance
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Parameter
Parameter
Parameter
V
I
Symbol
Symbol
Symbol
C(pulse)
h
h
h
h
h
h
V
CE(sat)
V
V
V
V
V
I
I
FE1
FE2
FE3
FE1
FE2
FE3
I
I
C(DC)
B(DC)
T
OL
IL
IL
P
CBO
R
R
CBO
R
R
CBO
CEO
EBO
T
stg
Note 2
Note 2
Note 2
T
j
Note 2
Note 2
Note 2
1
2
Note 2
Note 2
Note 2
1
2
Note 1
Note 2
V
V
V
V
I
V
V
V
V
V
V
V
C
CB
CE
CE
CE
CE
CB
CE
CE
CE
IN
CE
= 0.5 A, I
= 5.0 V, I
= 30 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
= 30 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
Data Sheet D11739EJ2V0DS
B
E
E
C
= 5 mA
C
C
C
C
C
C
C
C
= 0
= 0
= 0.5 A
= 0.1 A
= 0.5 A
= 0.7 A
= 100 µ A
= 0.1 A
= 0.5 A
= 0.7 A
= 100 µ A
Conditions
Conditions
−55 to +150
Ratings
0.02
250
150
0.7
1.0
30
25
10
MIN.
MIN.
3.29
300
300
135
150
300
135
329
−
7
TYP.
TYP.
0.27
400
700
600
470
0.2
4.7
10
−
MAX.
MAX.
6.11
100
100
611
0.4
0.3
0.3
0.3
13
−
BB1 SERIES
Unit
mW
Unit
Unit
nA
kΩ
nA
kΩ
°C
°C
Ω
Ω
V
V
V
A
A
A
−
−
−
V
V
−
−
−
V
V