SFT1 EIC Semiconductor Incorporated, SFT1 Datasheet
SFT1
Manufacturer Part Number
SFT1
Description
Super Fast Rectifier Diodes
Manufacturer
EIC Semiconductor Incorporated
Datasheet
1.SFT1.pdf
(2 pages)
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FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes :
Page 1 of 2
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
SFT1 - SFT9
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Super fast recovery time
* Pb / RoHS Free
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Maximum Peak Forward Surge Current
8.3 ms. Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
( 1 ) Reverse Recovery Test Conditions : I
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
Method 208 guaranteed
RATING
Ta = 100 C
Ta = 25 C
Ta = 55 C
F
= 2.5 A.
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
SYMBOL SFT1 SFT2 SFT3 SFT4 SFT5 SFT6 SFT7 SFT8 SFT9 UNIT
V
V
I
T
I
V
F(AV)
I
FSM
R(H)
V
Trr
RRM
RMS
C
T
STG
I
DC
R
F
J
J
DC
50
35
50
100
100
70
0.95
150
105
150
Dimensions in inches and ( millimeters )
RECTIFIER DIODES
200
140
200
- 65 to + 150
- 65 to + 150
SUPER FAST
0.161 (4.1)
0.154 (3.9)
0.0385 (0.98)
0.040 (1.02)
300
210
300
100
2.5
5.0
50
35
50
400
280
400
1.7
D2A
600
420
600
Rev. 02 : March 25, 2005
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
1.00 (25.4)
MIN.
MIN.
800
560
800
4.0
1000
1000
700
ns
pf
V
V
V
A
A
V
C
C
A
A
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SFT1 Summary of contents
Page 1
... Storage Temperature Range Notes : ( 1 ) Reverse Recovery Test Conditions : Measured at 1.0 MHz and applied reverse voltage of 4.0 V Page RECTIFIER DIODES Dimensions in inches and ( millimeters ) SYMBOL SFT1 SFT2 SFT3 SFT4 SFT5 SFT6 SFT7 SFT8 SFT9 UNIT V 50 100 150 200 RRM V 35 ...
Page 2
... RATING AND CHARACTERISTIC CURVES ( SFT1 - SFT9 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 D.U. Vdc (approx) 1 NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 2 ...