ZXMN10B08E6 Zetex Semiconductors plc., ZXMN10B08E6 Datasheet - Page 2
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ZXMN10B08E6
Manufacturer Part Number
ZXMN10B08E6
Description
100v N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet
1.ZXMN10B08E6.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMN10B08E6TA
Manufacturer:
MAXIM
Quantity:
3 380
Part Number:
ZXMN10B08E6TA
Manufacturer:
ZETEX
Quantity:
20 000
ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ZXMN10B08E6
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C (b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
S E M I C O N D U C T O R S
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
SYMBOL
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
T j :T stg
SYMBOL
R θJA
R θJA
2
-55 to +150
VALUE
LIMIT
13.6
113
100
1.9
1.5
1.6
2.5
1.1
8.8
1.7
73
9
9
20
ISSUE 1 - OCTOBER 2005
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
V
V
A
A
A
A