SI6413DQ Vishay, SI6413DQ Datasheet - Page 2

• Manufacturer Part Number: SI6413DQ
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

Si6413DQ
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0
b
Parameter
V
GS
1
V
= 5 thru 2 V
a
a
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
2
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
1.5 V
Symbol
V
r
I
DS(on)
DS(on)
t
t
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
SD
t
t
rr
fs
gs
gd
r
f
g
4
1.0 V
5
New Product
V
I
V
D
DS
DS
^ -1 A, V
= -10 V, V
I
F
V
V
V
= -16 V, V
V
V
V
V
V
V
V
DS
= -1.3 A, di/dt = 100 A/ms
GS
GS
GS
I
DS
DS
S
DS
DS
DD
DD
Test Condition
= -1.3 A, V
= 0 V, V
= V
= -2.5 V, I
= -1.8 V, I
= -4.5 V, I
= -15 V, I
= -16 V, V
= -10 V, R
= -10 V, R
-5 V, V
GEN
GS
GS
GS
, I
= -4.5 V, R
GS
GS
D
= -5 V, I
= 0 V, T
D
D
D
= -400 mA
D
GS
= "8 V
GS
L
L
= -4.5 V
= -8.8 A
= -7.6 A
= -6.8 A
= -8.8 A
= 10 W
= 10 W
= 0 V
= 0 V
D
J
30
24
18
12
= 70_C
G
= -8.8 A
6
0
0.0
= 6 W
0.2
V
GS
0.4
Transfer Characteristics
-0.40
- Gate-to-Source Voltage (V)
Min
-20
0.6
25_C
T
C
= 125_C
0.8
0.008
0.010
0.013
-0.58
Typ
15.5
120
305
160
9.5
45
69
55
90
S-22384—Rev. A, 30-Dec-02
Document Number: 72084
1.0
"100
Max
0.010
0.013
0.016
1.2
-0.8
-1.1
-10
105
200
470
250
150
-1
85
-55 _C
1.4
Unit
nA
m
mA
nC
ns
V
A
W
S
V
1.6