SI6993DQ Vishay, SI6993DQ Datasheet - Page 2

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SI6993DQ

Manufacturer Part Number
SI6993DQ
Description
Dual P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Manufacturer
Quantity
Price
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SI6993DQ-T1-E3
Manufacturer:
Vishay/Siliconix
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Manufacturer:
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Notes
a.
b.
www.vishay.com
2
Si6993DQ
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0
b
Parameter
1
V
DS
a
a
Output Characteristics
V
- Drain-to-Source Voltage (V)
a
GS
= 10 thru 5 V
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
4 V
Symbol
V
r
r
I
DS(on)
t
t
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
4
3 V
5
V
New Product
DS
I
V
D
DS
^ - 1 A, V
= - 15 V, V
I
V
F
V
V
= - 30 V, V
V
V
V
DS
V
V
V
DS
= - 1.0 A, di/dt = 100 A/ms
GS
I
DS
GS
DS
S
DS
DD
DD
Test Condition
= 0 V, V
= - 1.0 A, V
w - 5 V, V
= - 4.5 V, I
= V
= - 15 V, I
= - 10 V, I
= - 30 V, V
= - 15 V, R
= - 15 V, R
f = 1.0 MHz
GEN
GS
GS
GS
, I
GS
= - 4.5 V, I
= - 10 V, R
D
= 0 V, T
GS
D
D
D
= - 250 mA
= "20 V
GS
GS
L
L
= - 4.7 A
= - 4.7 A
= - 3.8 A
= 15 W
= 15 W
= - 10 V
= 0 V
= 0 V
J
D
30
24
18
12
G
= 55_C
6
0
= - 4.7 A
0.0
= 6 W
0.5
V
1.0
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
- 1.0
1.5
- 15
2.0
0.024
0.038
Typ
- 0.74
5.8
4.6
2.5
14
13
13
14
52
26
40
3
S-31912—Rev. A, 15-Sep-03
Document Number: 72369
T
C
25_C
3.0
= - 55_C
"100
Max
0.031
0.048
- 3.0
- 1.1
- 10
20
20
22
80
40
60
- 1
3.5
4.0
125_C
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
4.5

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