SI6562DQ Vishay, SI6562DQ Datasheet - Page 5

• Manufacturer Part Number: SI6562DQ
• Description: N- And P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Document Number: 70720
S-56944—Rev. B, 23-Nov-98
0.20
0.16
0.12
0.08
0.04
4.5
3.6
2.7
1.8
0.9
30
24
18
12
6
0
0
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
= 3.5 A
V
GS
V
= 10 V
2
6
3
DS
Q
= 2.5 V
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
V
D
– Total Gate Charge (nC)
GS
– Drain Current (A)
Gate Charge
12
4
6
= 5, 4.5, 4, 3,5 V
2.5 V
18
6
9
3 V
V
GS
2 V
1.5 V
= 4.5 V
24
12
8
10
30
15
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
8
4
0
0
–50
0
0
On-Resistance vs. Junction Temperature
C
rss
–25
V
I
D
GS
0.5
= 3.5 A
V
V
= 4.5 V
4
DS
GS
T
T
Transfer Characteristics
J
C
0
C
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
= 125 C
25 C
– Gate-to-Source Voltage (V)
iss
1.0
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Capacitance
25
8
Vishay Siliconix
C
1.5
50
oss
12
75
Si6562DQ
2.0
–55 C
100
16
2.5
125
150
3.0
20
2-5