SI5511DC Vishay, SI5511DC Datasheet - Page 9

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SI5511DC

Manufacturer Part Number
SI5511DC
Description
N- And P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5511DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
0.001
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.01
0.1
10
20
- 50
0.0
1
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
T
0.4
J
J
= 150 °C
25
- Temperature (°C)
I
D
= 250 µA
0.6
50
75
0.001
0.8
0.01
T
100
0.1
J
10
1
= 25 °C
100
0.1
Limited by r
* V
1.0
Safe Operating Area, Junction-to-Case
125
GS
V
minimum V
150
1.2
DS
DS(on)
Single Pulse
T
- Drain-to-Source Voltage (V)
A
= 25 °C
1
*
GS
at which r
DS(on)
10
50
40
30
20
10
0.40
0.32
0.24
0.16
0.08
0.00
0
is specified
10
-4
1
10 ms
100 ms
1 s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
10
-3
100
V
2
GS
10
Single Pulse Power
T
-2
- Gate-to-Source Voltage (V)
A
= 25 °C
10
Time (s)
-1
Vishay Siliconix
T
3
A
= 125 °C
1
Si5511DC
www.vishay.com
10
4
I
D
10
= 2.3 A
2
10
3
9
5

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