SI5402BDC Vishay, SI5402BDC Datasheet - Page 2

• Manufacturer Part Number: SI5402BDC
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
www.vishay.com
2
Si5402BDC
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0.0
b
Parameter
0.5
V
a
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
1.0
a
a
V
J
GS
= 25_C UNLESS OTHERWISE NOTED)
1.5
= 10 thru 4 V
2.0
Symbol
V
r
r
I
DS(on)
DS(on)
t
3 V
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
2.5
3.0
New Product
V
V
I
DS
D
DS
^ 1 A, V
I
= 15 V, V
F
V
= 30 V, V
V
V
V
V
V
V
V
V
DS
= 1.1 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
GS
GS
DS
S
DS
DD
DD
= 1.1 A, V
= 0 V, V
= V
w 5 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 30 V, V
= 15 V, R
= 15 V, R
f = 1 MHz
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
= 0 V, T
D
D
GS
GS
D
D
GS
L
L
= 250 mA
= "20 V
= 4.9 A
= 4.4 A
= 4.9 A
= 15 W
= 15 W
= 10 V
= 0 V
= 0 V
J
20
16
12
D
g
8
4
0
= 85_C
= 4.9 A
0.0
= 6 W
0.5
V
GS
1.0
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
1.0
20
1.5
T
2.0
C
25_C
= 125_C
0.029
0.035
Typ
0.8
1.9
1.6
19
10
14
10
10
27
10
20
S-41495—Rev. A, 09-Jun-04
2.5
Document Number: 73051
3.0
Max
"100
0.035
0.042
3.0
1.2
20
15
15
40
15
60
1
5
−55_C
3.5
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
4.0