SI5435BDC Vishay, SI5435BDC Datasheet - Page 4

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SI5435BDC

Manufacturer Part Number
SI5435BDC
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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4
Si5435BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.1
−0.2
−0.3
0.6
0.5
0.4
0.3
0.2
0.1
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
−3
Single Pulse
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
10
100
0.01
100
0.1
10
−2
1
0.1
125
*V
Limited
GS
I
Square Wave Pulse Duration (sec)
D(on)
Single Pulse
*r
T
150
u minimum V
C
DS(on)
V
= 25_C
New Product
DS
10
Limited
− Drain-to-Source Voltage (V)
Safe Operating Area
−1
1
GS
BV
at which r
DSS
Limited
DS(on)
1
10
50
40
30
20
10
0
10
is specified
I
DM
−3
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
−2
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Single Pulse Power
DM
JM
10
− T
−1
Time (sec)
t
A
1
= P
t
2
DM
1
Z
thJA
thJA
100
t
t
S-41887—Rev. A, 18-Oct-04
1
2
(t)
Document Number: 73137
= 80_C/W
10
600
100
600

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