SI3948DV Vishay, SI3948DV Datasheet

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SI3948DV

Manufacturer Part Number
SI3948DV
Description
Dual N-channel 30-v D-s Rated Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3948DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3948DV-T1-E3
Quantity:
70 000
Part Number:
SI3948DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 70969
S-61828—Rev. A, 23-Aug-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 s Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
V
3 mm
Surface Mounted on FR4 Board.
t
DS
30
30
5 sec.
(V)
G1
G2
S2
Top View
1
2
3
TSOP-6
2.85 mm
J
J
a, b
a, b
0.175 @ V
0.105 @ V
= 150 C)
= 150 C)
a
a
r
Parameter
Parameter
DS(on)
6
5
4
Dual N-Channel 30-V (D-S) MOSFET
a, b
a, b
GS
GS
( )
= 4.5 V
= 10 V
D1
S1
D2
a, b
Steady State
Steady State
T
T
T
T
t
A
A
A
A
I
New Product
D
= 25 C
= 70 C
= 25 C
= 70 C
5 sec
(A)
2.5
2.0
G
1
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
I
I
DM
thJA
thJA
I
thJL
GS
DS
D
D
S
D
D
stg
D
S
1
1
Typical
130
93
75
G
–55 to 150
2
Limit
www.vishay.com FaxBack 408-970-5600
1.05
1.15
0.73
N-Channel MOSFET
30
2.5
2.0
20
8
Maximum
Vishay Siliconix
D
S
110
150
90
2
2
Si3948DV
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1

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SI3948DV Summary of contents

Page 1

... stg Symbol Typical t 5 sec thJA thJA Steady State 130 Steady State R 75 thJL Si3948DV Vishay Siliconix N-Channel MOSFET Limit Unit 2.5 2 1.05 1. 0.73 –55 to 150 C Maximum Unit 110 ...

Page 2

... Si3948DV Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... 300 250 200 150 = 10 V 100 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 Si3948DV Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si3948DV Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.1 0.00 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A D 0.2 –0.0 –0.2 –0.4 –0.6 –0.8 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Document Number: 70969 S-61828—Rev. A, 23-Aug-99 New Product –2 – Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 Si3948DV Vishay Siliconix 1 10 2-5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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