SI3433BDV Vishay, SI3433BDV Datasheet - Page 2

• Manufacturer Part Number: SI3433BDV
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
www.vishay.com
2
Si3433BDV
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0.0
b
Parameter
0.5
V
a
a
DS
1.0
Output Characteristics
− Drain-to-Source Voltage (V)
a
V
GS
1.5
= 5 thru 2.5 V
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
2.5
Symbol
3.0
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
3.5
1.5 V
2 V
1 V
4.0
V
DS
I
V
D
DS
^ −1 A, V
= −10 V, V
I
F
V
= −20 V, V
V
V
V
V
V
V
V
V
GS
= −1.7 A, di/dt = 100 A/ms
DS
GS
I
DS
V
S
DS
DS
DD
DD
Test Condition
GS
DS
= −1.7 A, V
= −4.5 V, I
= −5 V, V
= V
= −2.5 V, I
= −20 V, V
= −5 V, I
= −10 V, R
= −10 V, R
= −1.8 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= −4.5 V, I
= −4.5 V, R
D
= 0 V, T
GS
D
GS
= −250 mA
D
D
GS
GS
D
= −5.6 A
L
L
= −4.5 V
= −4.8 A
= −5.6 A
= 10 W
= 10 W
= −1 A
= "8 V
= 0 V
= 0 V
J
20
16
12
D
= 85_C
8
4
0
g
= −5.6 A
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
−0.45
Min
25_C
−20
T
− Gate-to-Source Voltage (V)
C
= 125_C
1.0
0.034
0.045
0.060
Typ
−0.7
1.7
3.5
10
12
15
45
80
60
40
S-40575—Rev. C, 29-Mar-04
1.5
Document Number: 72027
−55_C
"100
Max
−0.85
0.042
0.057
0.080
−1.2
130
100
−1
−5
18
25
75
70
2.0
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
2.5