SUD45P03-10 Vishay, SUD45P03-10 Datasheet - Page 2

• Manufacturer Part Number: SUD45P03-10
• Description: P-channel Enhancement-mode Transistor
• Manufacturer: Vishay

SUD45P03-10
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2-2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
Parameter
c
c
c
c
c
a
a
a
a
_
Symbol
V
V
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
C
GS(th)
D(on)
C
C
V
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
g
SM
t
oss
t
rss
t
SD
iss
rr
fs
gs
gd
r
f
g
C
I
V
D
V
V
DS
DS
DS
GS
= 25_C)
V
^ –45 A, V
GS
= –15 V, V
= –30 V, V
= –10 V, I
I
V
V
V
F
V
V
V
V
V
V
V
V
= 0 V, V
DS
DS
DD
DD
GS
= –45 A, di/dt = 100 A/ms
DS
DS
I
GS
GS
DS
DS
F
Test Condition
= –45 A, V
= –15 V, R
= –15 V, R
= –5 V, V
= –4.5 V, I
= V
= 0 V, V
= –5 V, V
= –10 V, I
= –15 V, I
= 0 V, I
= –30 V, V
GEN
GS
D
DS
GS
GS
GS
= –15 A, T
, I
= –25 V, f = 1 MHz
= –10 V, R
= –10 V, I
D
D
GS
= 0 V, T
GS
= –250 mA
GS
= –250 mA
D
GS
D
D
L
L
GS
= "20 V
= –15 A
= 0.33 W
= 0.33 W
= –15 A
= –15 A
= –4.5 V
= –10 V
= 0 V
= 0 V
J
J
D
D
= 125_C
= 125_C
G
= –45 A
= 2.4 W
Min
–1.0
–30
–50
–20
20
Typ
6000
1100
700
375
100
140
1.0
90
20
16
15
55
S-02596—Rev. D, 21-Nov-00
Document Number: 70766
"100
Max
0.010
0.015
0.018
–50
150
550
200
250
100
100
1.5
–1
25
Unit
nA
m
mA
pF
nC
ns
ns
W
V
A
S
A
V