SUD50P04-23 Vishay, SUD50P04-23 Datasheet - Page 4

• Manufacturer Part Number: SUD50P04-23
• Description: P-channel 40-v D-s 175c Mosfet
• Manufacturer: Vishay

SUU/SUD50P04-23
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
100
0.1
200
160
120
10
10
80
40
1
8
6
4
2
0
0.00
0
0.001
0
Single Pulse Power, Junction-to-Ambient
I
D
Source-Drain Diode Forward Voltage
= 30 A
V
0.2
0.01
DS
10
V
SD
= 10 V
Q
T
g
- Source-to-Drain Voltage (V)
J
0.4
- Total Gate Charge (nC)
= 150 °C
V
DS
Gate Charge
0.1
20
= 20 V
Time (sec)
V
0.6
DS
= 30 V
30
1
T
0.8
J
= 25 °C
10
40
1.0
1.2
100
50
- 0.1
- 0.3
200
160
120
0.7
0.5
0.3
0.1
1.8
1.5
1.2
0.9
0.6
2.1
80
40
0
0.001
- 50
- 50
Single Pulse Power, Junction-to-Case
- 25
I
- 25
On-Resistance vs. Junction Temperature
D
= 15 A
T
0
0
0.01
J
- Junction Temperature (°C)
T
25
Threshold Voltage
25
J
- Temperature (°C)
Time (sec)
50
50
0.1
I
D
S-70198-Rev. A, 29-Jan-07
75
75
Document Number: 74423
= 250 µA
V
GS
100
100
= 4.5 V
V
1
125
125
I
GS
D
= 5 mA
= 10 V
150
150
175
175
10