SI4463BDY Vishay, SI4463BDY Datasheet - Page 4
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SI4463BDY
Manufacturer Part Number
SI4463BDY
Description
P-channel 2.5-v G-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI4463BDY.pdf
(6 pages)
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Si4463BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
- 0.4
0.6
0.4
0.2
0.0
0.2
0.01
- 50
0.1
2
1
10 -
- 25
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
I
D
Threshold Voltage
T
= 250 µA
J
– Temperature (°C)
25
10 -
3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
100
10 -
0.01
100
r
0.1
DS(on)
10
1
2
0.1
125
Limited
Limited
I
D(on)
New Product
Square Wave Pulse Duration (sec)
Single Pulse
T
150
C
V
= 25 °C
DS
Safe Operating Area
10 -
– Drain-to-Source Voltage (V)
1
1
BV
DSS
Limited
1
50
40
30
20
10
10
0
0.01
I
DM
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Limited
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
-
1
T
t
A
1
= P
t
2
S-71598-Rev. B, 30-Jul-07
Document Number: 72789
DM
Z
thJA
100
thJA
10
t
t
1
2
(t)
= 70 °C/W
100
600
600