SI2301DS Vishay, SI2301DS Datasheet - Page 2

• Manufacturer Part Number: SI2301DS
• Description: P-channel 1.25-w, 2.5-v Mosfet
• Manufacturer: Vishay

Notes
a.
b.
c.
www.vishay.com
2
Si2301DS
Vishay Siliconix
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On Resistance
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn On Time
Turn-On Time
Turn-Off Time
Turn-Off Time
Pulse test: PW v300 ms duty cycle v2%.
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
b
c
Parameter
a
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
r
(BR)DSS
I
I
DS(
DS(on)
t
t
I
I
I
C
GS(th)
D(
D(on)
V
C
C
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
oss
t
SD
rss
t
iss
fs
gs
gd
r
f
g
)
)
V
DS
V
DS
I
I
V
V
V
D
D
= - 20 V, V
V
V
V
V
DS
DS
V
V
GS
V
^ - 1 0 A V
^ - 1.0 A, V
GS
DS
DS
I
= - 6 V, V
V
Test Conditions
GS
S
DS
DS
DS
DD
v - 5 V, V
v - 5 V, V
= - 2.5 V, I
= - 1.6 A, V
= - 6 V, V
= V
= - 4.5 V, I
= 0 V, I
= - 20 V, V
= 0 V, V
= - 5 V, I
= - 6 V, R
I
I
D
D
R
GS
^ - 2.8 A
^ - 2.8 A
G
GS
GS
, I
= 6 W
D
D
GS
GEN
GEN
= 0 V, T
GS
D
= 0, f = 1 MHz
= - 250 mA
GS
GS
= - 250 mA
D
GS
D
GS
= - 2.8 A
L
= "8 V
= - 2.8 A
= - 4.5 V
= - 2.0 A
= - 4.5 V
= - 2.5 V
= 6 W
= - 4 5 V
= - 4.5 V
= 0 V
= 0 V
J
= 55_C
Min
- 0.45
- 20
- 6
- 3
Limits
0.105
0.145
Typ
- 0.80
0.85
1.70
13.0
36.0
415
223
6.5
5.8
87
42
34
S-31990—Rev. E, 13-Oct-03
Document Number: 70627
"100
Max
0.130
0.190
- 1.2
- 10
10
25
60
70
60
- 1
Unit
nC
nA
mA
mA
pF
ns
ns
W
W
V
V
A
A
S
V