SI2316DS Vishay, SI2316DS Datasheet - Page 3

• Manufacturer Part Number: SI2316DS
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 71798
S-05481—Rev. A, 21-Jan-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.1
0.5
0.4
0.3
0.2
0.1
0.0
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
0.2
= 3.4 A
2
Source-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
= 15 V
T
1
V
V
J
GS
SD
= 150_C
Q
4
0.4
g
= 4.5 V
– Source-to-Drain Voltage (V)
I
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
6
2
0.6
8
0.8
3
10
T
J
= 25_C
1.0
12
V
GS
4
1.2
= 10 V
14
1.4
16
5
New Product
350
300
250
200
150
100
2.0
1.5
1.0
0.5
0.0
0.5
0.4
0.3
0.2
0.1
0.0
50
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
–25
D
GS
= 3.4 A
5
= 10 V
2
T
V
V
C
0
J
DS
GS
rss
– Junction Temperature (_C)
– Gate-to-Source Voltage (V)
10
– Drain-to-Source Voltage (V)
25
Capacitance
I
D
4
= 3.4 A
Vishay Siliconix
50
15
C
iss
6
75
C
20
Si2316DS
oss
100
www.vishay.com
8
25
125
150
10
30
3