SI8401DB Vishay, SI8401DB Datasheet - Page 3

• Manufacturer Part Number: SI8401DB
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 71674
S-50066—Rev. G, 17-Jan-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
0.12
0.09
0.06
0.03
0.00
10
0.1
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
1
DS
= 1 A
0.2
On-Resistance vs. Drain Current
T
= 10 V
4
J
V
= 150_C
SD
Q
g
2
I
− Source-to-Drain Voltage (V)
D
− Total Gate Charge (nC)
0.4
− Drain Current (A)
Gate Charge
8
3
0.6
4
12
0.8
T
J
5
= 25_C
V
V
GS
GS
16
= 2.5 V
= 4.5 V
1.0
6
20
1.2
7
1500
1200
0.30
0.24
0.18
0.12
0.06
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
−25
V
I
C
D
GS
rss
1
= 1 A
V
V
4
= 4.5 V
GS
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
2
25
Capacitance
C
8
I
oss
D
= 1 A
Vishay Siliconix
50
3
C
iss
12
75
Si8401DB
4
100
www.vishay.com
16
5
125
150
20
6
3