BTB1386LN3 Cystech Electonics Corp., BTB1386LN3 Datasheet - Page 2

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BTB1386LN3

Manufacturer Part Number
BTB1386LN3
Description
Low Vcesat Pnp Epitaxial Planar Transistor
Manufacturer
Cystech Electonics Corp.
Datasheet
Characteristics
Classification Of h
BTB1386LN3
*V
Symbol
BV
BV
BV
Range
*h
I
Rank
I
Cob
CBO
EBO
CE(sat)
f
T
CBO
CEO
EBO
FE
Min.
120
-20
-15
-6
120~270
-
-
-
-
-
(Ta=25 C)
Q
FE
CYStech Electronics Corp.
Typ.
120
60
-
-
-
-
-
-
-
180~390
R
Max.
-0.5
-0.5
-1.0
560
-
-
-
-
-
270~560
MHz
Unit
µA
µA
pF
V
V
V
V
-
S
*Pulse Test : Pulse Width 380µs, Duty Cycle 2%
I
I
I
I
Test Conditions
V
V
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
=-50µA, I
=-50µA, I
=-1mA, I
=-4A, I
=-5V, I
=-2V, I
=-6V, I
=-15V, I
=-20V, f=1MHz
B
=-0.1A
C
C
C
B
C
E
=0
=-0.5A
=-50mA, f=30MHz
E
=0
=0
=0
=0
CYStek Product Specification
Spec. No. : C851N3
Issued Date : 2004.02.27
Revised Date : 2004.07.01
Page No. : 2/4

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