T930S Infineon Technologies Corporation, T930S Datasheet
T930S
Available stocks
Related parts for T930S
T930S Summary of contents
Page 1
... Haltestrom holding current Einraststrom latching current 1) Werte nach DIN IED 747-6 (ohne vorausgehende Kommutierung) / values to DIN IEC 747-6 (without prior commutation) prepared by: H.Sandmann approved by: M.Leifeld IFBIP D AEC/ 2008-09-15, H.Sandmann T930S T = -40°C... max Elektrische Eigenschaften T = -40°C... max T = +25° ...
Page 2
... Gehäuse, siehe Anlage case, see annex Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft clamping force Steueranschlüsse control terminals Gewicht weight Kriechstrecke creepage distance Schwingfestigkeit vibration resistance IFBIP D AEC/ 2008-09-15, H.Sandmann T930S max DRM R RRM DIN IEC 60747 ° ...
Page 3
... N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor Massbild 1 IFBIP D AEC/ 2008-09-15, H.Sandmann T930S 46/08 1: Anode / Anode 2: Kathode / Cathode 4: Gate 5: Hilfskathode/ Auxiliary Cathode Seite/page 3/6 ...
Page 4
... R [°C/W] thn kathodenseitig cathode-sided [s] n Analytische Funktion / Analytical function: 0,05 0,04 0,03 0,02 0,01 0,00 0,001 0,01 Transienter innerer Wärmewiderstand fü Transient thermal impedance for DC IFBIP D AEC/ 2008-09-15, H.Sandmann T930S 0,00114 0,00224 0,00487 0,00140 0,01500 0,17000 0,00106 0,00239 0,004 0,00130 0,01500 0,160 0,00106 0,00245 0,00499 0,00130 ...
Page 5
... Grenzdurchlasskennlinie / Limiting on-state characteristic i IFBIP D AEC/ 2008-09-15, H.Sandmann T930S Durchlasskennlinie ∆Z / ∆Z th Θ rec th Θ sin Θ = 180° Θ = 120° 0,00204 0,00353 0,00106 0,00168 0,00200 0,00343 0,00103 0,00161 ...
Page 6
... If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. IFBIP D AEC/ 2008-09-15, H.Sandmann T930S A 46/08 Seite/page 6/6 ...