TIC116 Bourns, Inc., TIC116 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/1/105/bourns__inc__sml.jpg)
TIC116
Manufacturer Part Number
TIC116
Description
Silicon Controlled Rectifiers
Manufacturer
Bourns, Inc.
Datasheet
1.TIC116.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TIC116D
Manufacturer:
TI
Quantity:
12 500
Company:
Part Number:
TIC116M
Manufacturer:
SAMHOP
Quantity:
12 000
Company:
Part Number:
TIC116N
Manufacturer:
TI
Quantity:
12 500
Company:
Part Number:
TIC116N-S
Manufacturer:
BOURNS
Quantity:
4 500
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
NOTE
thermal characteristics
2
dv/dt
I
I
R
R
V
DRM
RRM
I
V
I
GT
θJC
GT
θJA
H
T
5: This parameter must be measured using pulse techniques, t
PARAMETER
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
On-state
voltage
Critical rate of rise of
off-state voltage
Junction to case thermal resistance
Junction to free air thermal resistance
the current carrying contacts, are located within 3.2 mm from the device body.
V
V
V
V
t
V
t
V
t
V
Initiating I
V
Initiating I
I
V
p(g)
p(g)
p(g)
T
D
R
AA
AA
AA
AA
AA
AA
D
= 8 A
= rated V
= rated V
= rated V
= 12 V
= 12 V
= 12 V
= 12 V
= 12 V
= 12 V
≥ 20 µs
≥ 20 µs
≥ 20 µs
T
T
PARAMETER
= 100 mA
= 100 mA
DRM
RRM
D
I
R
R
R
R
(see Note 5)
I
TEST CONDITIONS
G
G
L
L
L
L
= 0
= 0
= 100 Ω
= 100 Ω
= 100 Ω
= 100 Ω
p
= 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
R O D U C T
T
T
t
T
T
T
T
p(g)
C
C
C
C
C
C
= 110°C
= 110°C
= - 40°C
= 110°C
= - 40°C
= 110°C
≥ 20 µs
Specifications are subject to change without notice.
APRIL 1971 - REVISED SEPTEMBER 2002
I N F O R M A T I O N
MIN
MIN
0.2
TYP
TYP
400
0.8
8
MAX
MAX
62.5
100
2.5
1.5
1.7
20
40
2
2
3
UNIT
UNIT
°C/W
°C/W
V/µs
mA
mA
mA
mA
V
V