TISP61089BSD Bourns, Inc., TISP61089BSD Datasheet - Page 3

• Manufacturer Part Number: TISP61089BSD
• Description: Dual Forward-conducting P-gate Thyristors Programmable Overvoltage Protectors
• Manufacturer: Bourns, Inc.

SEPTEMBER 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the gate supply
Recommended Operating Conditions
Thermal Characteristics
Electrical Characteristics, T J = 25 °C (Unless Otherwise Noted)
V
R
V
V
GK(BO)
I
V
C
GKS
θJA
C
I
R
V
FRM
(BO)
I
I
GT
GT
D
H
KA
F
G
S
TISP61089BSD High Voltage Ringing SLIC Protector
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
TISP61089BSD gate decoupling capacitor
TISP61089BSD series resistor for GR-1089-CORE first-level and second-level surge survival
TISP61089BSD series resistor for GR-1089-CORE intra-building port surge survival
TISP61089BSD series resistor for K.20, K.21 and K.45 coordination with a 400 V primary
protector
Peak forward recovery
Gate-cathode impulse
Parameter
Gate-cathode trigger
Gate reverse current
Cathode-anode off-
Gate trigger current
voltage value (V
device terminals are a.c. connected to the guard terminal of the bridge.
Breakover voltage
breakover voltage
state capacitance
Off-state current
Forward voltage
Junction to free air thermal resistance
Holding current
voltage
voltage
Parameter
GG
).
V
2/10 µs, I
2/10 µs, I
(see Note 4)
I
2/10 µs, I
I
V
I
I
f = 1 MHz, V
F
T
T
T
D
GG
= 5 A, t
= -1 A, di/dt = 1A/ms, V
= -3 A, t
= -3 A, t
= V
= V
DRM
GK
TM
TM
F
w
Component
p(g)
p(g)
, V
= 100 A, di/dt = 80 A/µs, R
= V
= 200 µs
d
= -100 A, di/dt = -80 A/µs, R
= -100 A, di/dt = -80 A/µs, R
GK
≥ 20 µs, V
≥ 20 µs, V
= 1 V, I
GKRM
= 0
, V
G
KA
= 0, (see Note 5)
GG
GG
= 0
Test Conditions
GG
= -100 V
= -100 V
JESD51-2 environment, P
T
= -100 V
A
= 25 °C, EIA/JESD51-3 PCB, EIA/
S
Test Conditions
= 50 Ω, (see Note 4)
S
S
= 50 Ω, V
= 50 Ω, V
GG
GG
TOT
= -100 V
= -100 V,
= 1.7 W
V
T
T
T
T
V
J
J
J
J
D
D
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= -48 V
= -3 V
-150
Min
Min
100
Min
40
10
8
Typ
Typ
220
Typ
Max
-112
Max
100
Max
-50
-50
2.5
120
12
10
50
-5
-5
3
5
Unit
°C/W
Unit
Unit
mA
mA
µA
µA
µA
µA
pF
pF
nF
V
V
V
V
V
Ω
Ω
Ω