EGF30A Extensive Technology Ind. Co., Ltd., EGF30A Datasheet - Page 2

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EGF30A

Manufacturer Part Number
EGF30A
Description
3.0a Smd Sintered Glass Passivated Junction Ultra Fast Recovery Rectifiers - 50v To 1000v
Manufacturer
Extensive Technology Ind. Co., Ltd.
Datasheet
0.01
100
100
2.0
1.5
3.0
2.5
1.0
0.5
0.1
10
10
1
1
0.2
0
Instantaneous Forward Voltage (Volts)
0.1
Fig.1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneour Forward
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Fig. 5 - Typical Junction Capacitance
single phase half wave 60Hz
resistive or inductive load
25
0.4
Reverse Voltage (Volts)
Ambient Temperature ( °C)
50
Characteristics
EGF30G
1.0
0.6
勖昇科技股份有限公司
Extensive Technology
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EGF30A-EGF30D
75
0.8
100
EGF30J-EGF30M
1.0
10
125
T
f=1.0MHz
Vsig=50mVp-p
J
=25°C
1.2
150
175
1.4
100
Page 2
+
-
Note: 1. rise time=7nS Max. input impedance=1MΩ, 22pF
Fig. 6 - Test Circuit Diagram and Reverse
50Ω
noninductive
25V
(approx)
1000
Rating and Characteristic Curves
125
100
100
dc
75
50
25
10
0.1
0
1
0
2. rise time=10nS Max. source impedance=80Ω
1
EGF30A thru EGF30M
Fig. 4 - Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage ( %)
Fig. 2 - Maximum Non-Repetitive Peak
Recovery Time Characteristic
T
8.3ms single half sine
wave (JEDEC Method)
non
inductive
A
=55°C
T
2
J
Number of Cycles at 60 Hz
=25°C
20
10Ω
noninductive
Forward Surge Current
oscilloscope
(note 1)
EGF30K ~ EGF30M
EGF30A ~ EGF30J
pulse
generator
(note 2)
5
40
-
+
10
T
-0.25A
60
-1.0A
0.5A
J
=100°C
0
0
20
5
Trr
10
time, t(nS)
80
T
J
15
=125°C
50
20
Rev. A
25
100
100
30

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