DT410EL Diodes, Inc., DT410EL Datasheet

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DT410EL

Manufacturer Part Number
DT410EL
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Diodes, Inc.
Datasheet
·
·
·
·
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Mechanical Data
·
·
Maximum Ratings
Thermal Characteristics
DS11601 Rev.C-4
Features
Notes:
the
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
High Cell Density DMOS Technology
Low On-State Resistance
High Power and Current Capability
Fast Switching Speed
High Transient Tolerance
SOT-223 Plastic Case
Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
1. R
solder mounting surface of the drain pins. R
1a. With 1 in
1b. With 0.0066 in
1c. With 0.0123 in
QJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
Characteristic
Characteristic
2
oz 2 oz. copper mounting pad R
25°C unless otherwise specified
2
2
oz 2 oz. copper mounting pad R
oz 2 oz. copper mounting pad R
Note 1a Continuous
Note 1a
Note 1b
Note 1c
Note 1
Pulsed
QJC
is guaranteed by design while R
C D
J
QJA = 42°C/W.
K
QJA = 110°C/W.
QJA = 95°C/W.
G
1 of 4
E
Symbol
Symbol
T
D
D
V
j
R
M
V
R
A
B
L
, T
P
GSS
DSS
I
QJA
QJC
D
d
STG
G
S
N-CHANNEL ENHANCEMENT MODE
H
N
QCA
is determined by the user’s board design.
FIELD EFFECT TRANSISTOR
-65 to +150
P
Value
Value
±2.1
100
±20
±10
3.0
1.3
1.1
42
12
S
R
DT410EL
All Dimensions in mm
Dim
A
B
C
D
G
H
K
M
N
R
E
L
P
S
J
SOT-223
°C/W
°C/W
0.025
0.254
Unit
Unit
6.30
2.90
6.71
3.30
2.22
0.92
1.10
1.55
0.66
4.55
Min
10°
10°
°C
W
V
V
A
DT410EL
0.102
0.356
Max
6.71
3.10
7.29
3.71
2.35
1.00
1.30
1.80
0.79
4.70
10°
16°
16°

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DT410EL Summary of contents

Page 1

... D E 2.22 2.35 G 0.92 1.00 1.10 1. 1.55 1. 0.025 0.102 L 0.66 0. 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm Value Unit 100 V ±20 V ±2.1 A ±10 3.0 1.3 W 1.1 -65 to +150 °C Value Unit 42 °C/W 12 °C/W is determined by the user’s board design. DT410EL ...

Page 2

... GS D — 25V — 1.0MHz — 120 50V 2. 5.0V, R GEN GEN 80V 2.1A — 5.0V GS — 2.3A (Note 2.3A 150 100A / µ 10A = 25W DT410EL ...

Page 3

... DS11601 Rev.C-4 2.0 1.5 1.0 0 Fig. 2, On-Resistance vs Gate Voltage and Drain Current 150 175 100 3.0V GS 3.5 4.0 5 DRAIN CURRENT (A) D 125 = 10V GATE TO SOURCE VOLTAGE (V) GS Fig. 4, Transfer Characteristics DT410EL 6 ...

Page 4

... Fig. 5, Maximum Safe Operating Area 0.01 0.1 1 SQUARE WAVE PULSE DURATION (seconds) 1 Fig. 6, Typical Normalized Transient Thermal Impedance Curves 100 R ( QJA QJA R = See Note 1c QJA P (pk ( QJA Duty Cycle 100 1000 3000 DT410EL ...

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