TT8K2 ROHM Co. Ltd., TT8K2 Datasheet

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TT8K2

Manufacturer Part Number
TT8K2
Description
2.5v Drive Nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
TT8K2
Manufacturer:
ROHM
Quantity:
30 000
2.5V Drive Nch MOSFET
Silicon N-channel MOSFET
1) Low on-state resistance with fast switching.
2) Low voltage drive (2.5V).
Switching
∗ 1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗ 2 When mounted on a ceramic board
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
Channel to ambient
∗ When mounted on a ceramic board
c
www.rohm.com
Type
TT8K2
Structure
Features
Application
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
TT8K2
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Package
Code
Basic ordering unit (pieces)
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TR
Symbol
Rth (ch-a)
V
V
Tstg
Tch
I
I
P
Symbol
DSS
GSS
I
I
DP
SP
D
S
D
∗ 1
∗ 1
∗ 2
−55 to +150
Limits
±2.5
1.25
±12
150
±10
0.8
1.0
Limits
30
10
100
125
1/4
°C / W / ELEMENT
°C / W / TOTAL
W / ELEMENT
W / TOTAL
Unit
Dimensions (Unit : mm)
Inner circuit
Unit
°C
°C
∗1 ESD protection diode
∗2 Body diode
V
V
A
A
A
A
∗2
TSST8
(8)
(1)
Abbreviated symbol : K02
∗1
(8)
(1)
(7)
(2)
(7)
(2)
∗2
(6)
(3)
Each lead has same dimensions
(5)
(4)
(6)
(3)
∗1
(5)
(4)
2009.04 - Rev.A
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain

Related parts for TT8K2

TT8K2 Summary of contents

Page 1

... Low on-state resistance with fast switching. 2) Low voltage drive (2.5V). Application Switching Packaging specifications Package Taping TR Type Code Basic ordering unit (pieces) 3000 TT8K2 Absolute maximum ratings (Ta=25°C) Parameter Drain−source voltage Gate−source voltage Continuous Drain current Pulsed Continuous Source current (Body diode) Pulsed ...

Page 2

... TT8K2 Electrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2.> Symbol Parameter Min. Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward transfer admittance ...

Page 3

... TT8K2 Electrical characteristics curves 2.5 Ta=25°C Pulsed V = 10V 4. =4. 2. 0.2 0.4 0.6 0.8 DRAIN-SOURCE VOLTAGE : V [V] DS Fig.1 Typical Output Characteristics( Ⅰ ) 1000 Ta= 25°C Pulsed 4.5V GS 100 10 0.1 1 DRAIN-CURRENT : I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ ) ...

Page 4

... TT8K2 300 Ta=25°C Pulsed 250 I = 1.2A D 200 I = 2.5A D 150 100 GATE-SOURCE VOLTAGE : V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 Ta=25°C f=1MHz Ciss V =0V GS 100 Coss Crss 10 0.01 0 DRAIN-SOURCE VOLTAGE : V [V] DS Fig.13 Typical Capacitance vs. Drain-Source Voltage ...

Page 5

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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