DAN801 Diotec Semiconductor AG, DAN801 Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
DAN801
Manufacturer Part Number
DAN801
Description
Small Signal Diode Arrays
Manufacturer
Diotec Semiconductor AG
Datasheet
1.DAN801.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DAN801
Manufacturer:
ROHM/罗姆
Quantity:
20 000
1
2
2
Characteristics
Forward voltage
Durchlass-Spannung
Leakage current
Sperrstrom
Reverse recovery time
Sperrverzug
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
[%]
120
100
I
FAV
80
60
40
20
Rated forward current versus ambient temperature )
Zul. Richtstrom in Abh. von der Umgebungstemp. )
Per diode – Pro Diode
Valid, if leads are kept at ambient temperature at a distance of 3 mm from case
Gültig, wenn die Anschlussdrähte in 3 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
0
0
T
A
50
100
150
[°C]
1
http://www.diotec.com/
1
T
T
I
I
F
R
j
j
= 10 mA through/über
= 25°C
= 25°C
= 10 mA to I
10
10
10
10
[A]
I
I
V
1
-1
-2
F
-4
-3
F
R
R
0
= 10 mA
= 20 V
= 1 mA
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
V
F
0.4
T = 125°C
j
DAN801 / DAP801 (200 mW)
R
V
I
t
thC
rr
R
F
0.6
© Diotec Semiconductor AG
0.8
T = 25°C
j
< 85 K/W
< 1.0 V
< 25 nA
1.0
< 4 ns
Kennwerte
[V] 1.4
1
)
2
)