EMF23 ROHM Co. Ltd., EMF23 Datasheet - Page 2

• Manufacturer Part Number: EMF23
• Description: Power Management Dual Transistors
• Manufacturer: ROHM Co. Ltd.

Transistors
Tr1
DTr2
Tr1
DTr2
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
1 Characteristics of built-in transistor.
2 120mW per element must not be exceeded.
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Transition frequency of the device
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Absolute maximum ratings (Ta=25GC)
Electrical characteristics (Ta=25GC)
120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Parameter
Parameter
Parameter
Parameter
Symbol
V
R
V
V
I
O(off)
Symbol
R
O(on)
G
2
I(off)
I(on)
f
I
/R
T
I
V
V
V
1
Tstg
Symbol
I
P
1
Tj
CBO
CEO
EBO
I
Tstg
C
V
C
V
P
I
I
Tj
CC
C
O
IN
C
Symbol
Min.
BV
BV
BV
0.8
V
30
Cob
3
7
I
I
CE (sat)
h
CBO
EBO
150 (TOTAL)
f
FE
CBO
CEO
EBO
T
150(TOTAL)
55 to 150
55 to 150
Limits
10~ 40
Typ.
250
150
Limits
0.1
150
10
100
150
1
60
50
Min.
50
50
180
6
60
50
6
Max.
0.88
0.5
0.3
0.5
1.2
Typ. Max. Unit
13
140
4
Unit
mW
mA
Unit
mW
mA
mA
V
V
V
MHz
C
C
390
Unit
V
V
mA
C
C
k
0.1
0.1
0.5
V
V
5
A
1
2
MHz
pF
V
V
I
V
V
V
V
V
V
V
V
O
A
A
CC
O
I
CC
O
CE
/I
I
5V
0.3V, I
5V, I
10mA/0.5mA
5V, I
50V, V
10V, I
I
I
I
V
V
I
V
V
V
C
C
E
C
= 50 A
= 1mA
= 50 A
CB
EB
/I
CE
CE
CB
O
O
B
O
= 6 V
= 60V
= 6V, I
= 12V, I
= 12V, I
E
5mA
= 50mA/ 5mA
Conditions
I
100 A
10mA
0V
5mA, f 100MHz
C
= 1mA
E
E
= 2mA, f = 100MHz
= 0A, f = 1MHz
Conditions
EMF23/UMF23N
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