RN2967 TOSHIBA Semiconductor CORPORATION, RN2967 Datasheet - Page 2

• Manufacturer Part Number: RN2967
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off
current
Emitter cut-off
current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
Input resistor
Resistor ratio
Characteristic
RN2967~2969
RN2967~2969
RN2967~2969
RN2967~2969
RN2967
RN2968
RN2969
RN2967
RN2968
RN2969
RN2967
RN2968
RN2969
RN2967
RN2968
RN2969
RN2967
RN2968
RN2969
RN2967
RN2968
RN2969
(Ta = 25°C) (Q1, Q2 Common)
V
V
Symbol
V
R1/R2
CE (sat)
I
I
I
I (OFF)
I (ON)
CBO
CEO
EBO
h
C
R1
f
FE
T
ob
Circuit
Test
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
2
V
V
V
V
V
V
I
I
I
V
I
V
V
I
V
f = 1MHz
C
C
B
C
C
I
CB
CE
EB
EB
EB
CE
CE
CE
CE
CB
C
= −0.25mA
= −10mA
= −5mA
= −5mA
= −5mA
= −0.1mA
= −6V, I
= −7V, I
= −15V, I
= −50V, I
= −50V, I
= −5V,
= −0.2V
= −5V
= − 10V
= −10V, I
Test Condition
C
C
―
―
E
B
C
E
= 0
= 0
= 0
= 0
= 0
= 0,
−0.081
−0.078
−0.167
0.191
0.421
−0.7
−1.0
−2.2
−0.5
−0.6
−1.5
15.4
32.9
0.09
Min
80
80
70
―
―
―
―
―
7
RN2967~RN2969
0.213
0.468
Typ.
−0.1
2.14
200
10
22
47
―
―
―
―
―
―
―
―
―
―
―
―
―
―
3
2005-02-22
−0.145
−0.311
−0.15
−1.16
0.232
0.515
−100
−500
−0.3
−1.8
−2.6
−5.8
−1.0
−2.6
28.6
61.1
2.35
Max
13
―
―
―
―
6
MHz
Unit
mA
kΩ
nA
pF
―
―
V
V
V