KSD401 Fairchild Semiconductor, KSD401 Datasheet

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KSD401

Manufacturer Part Number
KSD401
Description
Ksd401 Npn Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2004 Fairchild Semiconductor Corporation
TV Vertical Deflection Output
• Collector-Base Voltage : V
• Collector Current : I
• Collector Dissipation : P
• Complement to KSB546
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
V
f
FE
C
CBO
T
FE
J
STG
CBO
CEO
EBO
C
CE
Symbol
Symbol
CBO
CEO
EBO
(sat)
Classification
Classification
h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
C
=2A
C
=25W(T
CBO
=200V
Parameter
C
=25 C)
C
T
=25 C)
120 ~ 240
C
=25 C unless otherwise noted
Parameter
T
Y
C
=25 C unless otherwise noted
KSD401
I
I
I
V
V
I
V
C
C
E
C
200 ~ 400
CB
CE
CE
= -500uA, I
= 500uA, I
= 10mA, I
= 500mA, I
Test Condition
= 150V, I
= 10V, I
= 10V, I
G
B
C
C
E
C
E
B
= 0
= 0.4A
= 0.4A
= 0
= 0
= 50mA
= 0
1.Base
1
Min.
200
150
120
5
- 55 ~ 150
2.Collector
Value
200
150
150
25
2
5
Typ.
TO-220
5
Max.
400
3.Emitter
50
1
Rev. B, February 2004
Units
W
Units
V
V
V
A
MHz
C
C
V
V
V
V
A

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KSD401 Summary of contents

Page 1

... CBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T h Classification FE Classification h FE ©2004 Fairchild Semiconductor Corporation KSD401 = =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 500uA 10mA, I ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1. Tc=25℃ 2. *single pulse *1ms Thermal limitation 1 S/B limitation 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2004 Fairchild Semiconductor Corporation 1000 I = 5mA 100 4mA 3mA 2mA 1mA B 10 ...

Page 3

... Package Dimensions 1.27 2.54TYP [2.54 ©2004 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. B, February 2004 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ ...

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