KST5086 Fairchild Semiconductor, KST5086 Datasheet

no-image

KST5086

Manufacturer Part Number
KST5086
Description
Kst5086/5087 Pnp Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2002 Fairchild Semiconductor Corporation
Low Noise Transistor
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
Marking Code
V
V
V
I
P
T
BV
BV
I
h
V
V
f
C
NF
C
CBO
T
FE
CBO
CEO
EBO
C
STG
Symbol
CE
BE
ob
CBO
CEO
(sat)
(sat)
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Type
Mark
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
: KST5086
: KST5087
: KST5086
: KST5087
: KST5086
: KST5087
: KST5086
: KST5087
: KST5087
T
a
=25 C unless otherwise noted
T
KST5086/5087
Parameter
a
=25 C unless otherwise noted
Marking
KST5086
2P
I
I
I
V
V
V
V
I
V
f=20MHz
V
f=100MHz
I
R
V
R
2 P
C
C
C
C
C
CB
CE
CE
CE
CE
CB
CE
S
S
= -100 A, I
= -1mA, I
= -10mA, I
= -10mA, I
= -100 A, V
=3K , f=1KHz
=10K , f=10Hz to 15.7KHz
= -20V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
Test Condition
B
C
C
C
C
E
C
=0
=0
E
= -100 A
= -1mA
= -10mA
B
B
= -500 A
= -20mA
E
=0
= -1mA
= -1mA
CE
=0
= -5V
1. Base 2. Emitter 3. Collector
3
Value
350
150
-50
-50
-50
-3
Min.
150
250
150
250
150
250
-50
-50
40
KST5087
2Q
1
SOT-23
-0.85
Max.
-0.3
500
800
-50
4
3
2
2
Rev. A2, November 2002
2
Units
mW
mA
V
V
V
C
Units
MHz
nA
pF
dB
dB
dB
V
V
V
V

Related parts for KST5086

KST5086 Summary of contents

Page 1

... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob NF Noise Figure : KST5086 : KST5087 : KST5087 Marking Code Type Mark ©2002 Fairchild Semiconductor Corporation KST5086/5087 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a ...

Page 2

... Typical Characteristics 1000 V = -5V KST5087 CE KST5086 100 [mA], COLLECTOR CURRENT C Figure 1. DC current Gain -100 V = -5V CE -10 -1 -0.1 -0.0 -0.2 -0.4 -0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 1000 100 [mA], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation -10 -1 -0.1 -0.01 -10 -100 -0 ...

Page 3

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, November 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

Related keywords