PZTA96S ON Semiconductor, PZTA96S Datasheet - Page 2

• Manufacturer Part Number: PZTA96S
• Description: High Voltage Pnp Transistor Transistor
• Manufacturer: ON Semiconductor

2. T
3. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
Collector−Emitter Breakdown Voltage
(I
Emitter−Base Breakdown Voltage
(I
Collector−Base Cutoff Current
(V
Emitter−Base Cutoff Current
(V
DC Current Gain (Note 3)
(I
Saturation Voltages
(I
(I
C
C
E
C
C
C
CB
BE
= −10 mAdc, I
A
= −1.0 mAdc, I
= −100 mAdc, I
= − 10 mAdc, V
= −20 mAdc, I
= −20 mAdc, I
= 25°C unless otherwise noted.
= − 400 Vdc, I
= − 4.0 Vdc, I
C
B
B
B
E
C
= 0)
CE
E
= −2.0 mAdc)
= −2.0 mAdc)
= 0)
= 0)
= 0)
= 0)
= − 10 Vdc)
Characteristic
(Note 2)
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PZTA96ST1
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
h
CBO
EBO
FE
−450
−450
−5.0
Min
50
−
−
−
−
Max
−0.1
−0.1
−0.6
−1.0
150
−
−
−
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
−