KSB744 Fairchild Semiconductor, KSB744 Datasheet

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KSB744

Manufacturer Part Number
KSB744
Description
Pnp Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2000 Fairchild Semiconductor International
Audio Frequency Power Amplifier
• Complement to KSD794/KSD794A
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 10ms, Duty Cycle 50%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2% Pulsed
h
V
I
I
P
h
V
V
I
P
TJ
T
I
I
h
V
V
f
C
FE
C
B
CP
CBO
EBO
T
FE1
FE2
EBO
C
STG
Symbol
CBO
CEO
C
CE
BE
ob
Symbol
(sat)
(sat)
Cassification
Classification
h
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Output Capacitance
FE2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
=25 C unless otherwise noted
a
C
=25 C)
T
=25 C)
KSB744/744A
60 ~ 120
C
Parameter
=25 C unless otherwise noted
R
V
V
V
V
I
I
V
V
f = 1MHz
C
C
CB
EB
CE
CE
CE
CB
= -1.5A, I
= -1.5A, I
Test Condition
= -45V, I
= -3V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, I
: KSB744
: KSB744A
C
C
C
C
B
C
E
E
= 0
= -20mA
= -0.5A
= -0.15A
= -0.15A
= -0.1A
100 ~ 200
= 0
= 0
O
1
1. Emitter
Min.
30
60
-55 ~ 150
Value
-0.6
150
-70
-45
-60
2.Collector
10
-5
-3
-5
1
Typ.
120
100
-0.5
-0.8
45
60
160 ~ 320
TO-126
Max.
Y
320
-1
-1
-2
-2
3.Base
Rev. A, February 2000
Units
W
W
V
V
V
V
A
A
A
C
C
Units
MHz
pF
V
V
A
A

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KSB744 Summary of contents

Page 1

... Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: PW 350 s, Duty Cycle 2% Pulsed h Cassification FE Classification h FE2 ©2000 Fairchild Semiconductor International KSB744/744A T =25 C unless otherwise noted C Parameter : KSB744 : KSB744A = = =25 C unless otherwise noted C Test Condition V = -45V -3V ...

Page 2

... Figure 4. Collector Output Capacitance - MAX(Pulse) Ic MAX(DC) -1 -0.1 -0. -5V CE -0.01 -0.1 -1 -10 I [A], COLLECTOR CURRENT C Figure 2. DC current Gain f=1.0MHz -10 -100 V [V], COLLECTOR-BASE VOLTAGE CB KSB744 V MAX CEO KSB744A V MAX CEO -10 -100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 6. Safe Operating Area Rev. A, February 2000 ...

Page 3

... Typical Characteristics 160 140 120 100 100 C], CASE TEMPERATURE C Figure 7. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International (Continued 125 150 175 200 100 125 150 175 200 C], CASE TEMPERATURE C Figure 8 ...

Page 4

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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