KSB744 Fairchild Semiconductor, KSB744 Datasheet
Home Datasheets Transistors KSB744
Manufacturer Part Number
KSB744
Description
Pnp Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
©2000 Fairchild Semiconductor International
Audio Frequency Power Amplifier
• Complement to KSD794/KSD794A
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 10ms, Duty Cycle 50%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2% Pulsed
h
V
I
I
P
h
V
V
I
P
TJ
T
I
I
h
V
V
f
C
FE
C
B
CP
CBO
EBO
T
FE1
FE2
EBO
C
STG
Symbol
CBO
CEO
C
CE
BE
ob
Symbol
(sat)
(sat)
Cassification
Classification
h
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Output Capacitance
FE2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
=25 C unless otherwise noted
a
C
=25 C)
T
=25 C)
KSB744/744A
60 ~ 120
C
Parameter
=25 C unless otherwise noted
R
V
V
V
V
I
I
V
V
f = 1MHz
C
C
CB
EB
CE
CE
CE
CB
= -1.5A, I
= -1.5A, I
Test Condition
= -45V, I
= -3V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, I
: KSB744
: KSB744A
C
C
C
C
B
C
E
E
= 0
= -20mA
= -0.5A
= -0.15A
= -0.15A
= -0.1A
100 ~ 200
= 0
= 0
O
1
1. Emitter
Min.
30
60
-55 ~ 150
Value
-0.6
150
-70
-45
-60
2.Collector
10
-5
-3
-5
1
Typ.
120
100
-0.5
-0.8
45
60
160 ~ 320
TO-126
Max.
Y
320
-1
-1
-2
-2
3.Base
Rev. A, February 2000
Units
W
W
V
V
V
V
A
A
A
C
C
Units
MHz
pF
V
V
A
A
Related parts for KSB744
KSB744 Summary of contents
... Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: PW 350 s, Duty Cycle 2% Pulsed h Cassification FE Classification h FE2 ©2000 Fairchild Semiconductor International KSB744/744A T =25 C unless otherwise noted C Parameter : KSB744 : KSB744A = = =25 C unless otherwise noted C Test Condition V = -45V -3V ...
... Figure 4. Collector Output Capacitance - MAX(Pulse) Ic MAX(DC) -1 -0.1 -0. -5V CE -0.01 -0.1 -1 -10 I [A], COLLECTOR CURRENT C Figure 2. DC current Gain f=1.0MHz -10 -100 V [V], COLLECTOR-BASE VOLTAGE CB KSB744 V MAX CEO KSB744A V MAX CEO -10 -100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 6. Safe Operating Area Rev. A, February 2000 ...
... Typical Characteristics 160 140 120 100 100 C], CASE TEMPERATURE C Figure 7. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International (Continued 125 150 175 200 100 125 150 175 200 C], CASE TEMPERATURE C Figure 8 ...
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...
Related keywords
KSB744 datasheet KSB744 data sheet KSB744 pdf datasheet KSB744 component KSB744 part KSB744 distributor KSB744 RoHS KSB744 datasheet download