SEP8506 Honeywell International's Solid State Electronics Center (SSEC), SEP8506 Datasheet - Page 3

• Manufacturer Part Number: SEP8506
• Description: Gaas Infrared Emitting Diode
• Manufacturer: Honeywell International's Solid State Electronics Center (SSEC)

SEP8506
GaAs Infrared Emitting Diode
Fig. 1
Fig. 3
Fig. 5
42
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Radiant Intensity vs
Angular Displacement
Forward Voltage vs
Forward Current
Spectral Bandwidth
870
-60
0
-45
890
Angular displacement - degrees
-30
Forward current - mA
910
Wavelength - nm
20
-15
930
0
950
+15 +30 +45 +60
40
970
990 1010
h
gra_030.ds4
gra_003.ds4
gra_005.ds4
60
Fig. 2
Fig. 4
Fig. 6
10.0
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
5.0
2.0
1.0
0.5
0.2
0.1
1.0
0.6
0.4
0.2
0.1
10
Radiant Intensity vs
Forward Current
Forward Voltage vs
Temperature
Coupling Characteristics
with SDP8406
6
4
2
0.01
-40
10
Lens-to-lens separation - inches
0.02
-15
I
T
F
A
= 20 mA
Forward current - mA
= 25 °C
Temperature - °C
0.05
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
20
10
I
T
0.1
F
V
A
= 20 mA
CE
= 25 °C
30
= 5V
35
0.2
40 50
60
0.5
gra_028.ds4
gra_207.ds4
gra_031.ds4
100
1.0
85