HY27US0812B Hynix Semiconductor, HY27US0812B Datasheet - Page 3

• Manufacturer Part Number: HY27US0812B
• Description: 512mb Nand Flash
• Manufacturer: Hynix Semiconductor

FEATURES SUMMARY
SUPPLY VOLTAGE
Memory Cell Array
x8 : (512+16) Bytes x 32 Pages x 4,096 Blocks
x16 : (256+8) Words x 32 Pages x 4,096 Blocks
PAGE SIZE
- x16 device : (256+8) Words
BLOCK SIZE
COPY BACK PROGRAM MODE
Rev 0.5 / Jul. 2007
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
- VCC = 2.7 to 3.6V : HY27US(08/16)12(1/2)B
- x8 device : (512+16) Bytes
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
- Random access: 12us (max.)
- Sequential access: 30ns (min.)
- Page program time: 200us (typ.)
- Fast page copy without external buffering
: HY27US0812(1/2)B
: HY27US1612(1/2)B
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
FAST BLOCK ERASE
STATUS REGISTER
ELECTRONIC SIGNATURE
- 1st cycle: Manufacturer Code
- 2nd cycle: Device Code
CHIP ENABLE DON’T CARE
HARDWARE DATA PROTECTION
CE DON’t CARD OPTION ONLY
DATA RETENTION
PACKAGE
- Block erase time: 2ms (Typ.)
- Simple interface with microcontroller
- Program/Erase locked during Power transitions
- 100,000 Program/Erase cycles (with 1bit/512byte ECC)
- 10 years Data Retention
- HY27US(08/16)12(1/2)B-T(P)
- HY27US0812(1/2)B-S(P)
- HY27US0812(1/2)B-F(P)
HY27US(08/16)12(1/2)B Series
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
: 48-Pin USOP1 (12 x 17 x 0.65 mm)
- HY27US(08/16)12(1/2)B-T (Lead)
- HY27US(08/16)12(1/2)B-TP (Lead Free)
- HY27US0812(1/2)B-S (Lead)
- HY27US0812(1/2)B-SP (Lead Free)
: 63-Ball FBGA (9 x 11 x 1.0 mm)
- HY27US0812(1/2)B-F (Lead)
- HY27US0812(1/2)B-FP (Lead Free)
3