MCH3412 Sanyo Semiconductor Corporation, MCH3412 Datasheet - Page 2

• Manufacturer Part Number: MCH3412
• Description: N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Switching Time Test Circuit
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
250
200
150
100
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
50
0
0
0
0
PW=10 s
D.C. 1%
10V
I D =1.5A
0V
P.G
0.1
2
Parameter
V IN
0.2
1.0A
Drain-to-Source Voltage, V DS -- V
4
Gate-to-Source Voltage, V GS -- V
V IN
0.3
R DS (on) -- V GS
6
50
G
I D -- V DS
0.4
8
0.5
10
V DD =15V
D
0.6
12
R DS (on)1
R DS (on)2
S
Symbol
t d (on)
t d (off)
R L =10
Coss
I D =1.5A
Ciss
Crss
V SD
Qgs
Qgd
Qg
t r
t f
0.7
14
MCH3412
0.8
16
V OUT
Ta=25 C
I D =1.5A, V GS =10V
I D =1A, V GS =-4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
V DS =10V, V GS =10V, I D =3A
V DS =10V, V GS =10V, I D =3A
V DS =10V, V GS =10V, I D =3A
I S =3A, V GS =0
0.9
18
IT02942
IT02944
MCH3412
1.0
20
Conditions
250
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
0
0
--60
0
--40
0.5
--20
Gate-to-Source Voltage, V GS -- V
1.0
Ambient Temperature, Ta -- C
0
min
1.5
R DS (on) -- Ta
20
I D -- V GS
2.0
40
Ratings
typ
60
2.5
18.5
0.93
0.63
0.85
105
180
2.8
4.4
4.9
64
42
25
7
80
3.0
max
100
150
3.5
1.2
84
120
V DS =10V
No.6901-2/4
4.0
140
IT02943
IT02945
Unit
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
160
4.5