SI7983DP Vishay, SI7983DP Datasheet - Page 3

• Manufacturer Part Number: SI7983DP
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72637
S-32520—Rev. A, 08-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
GS
V
I
Source-Drain Diode Forward Voltage
D
DS
10
= 12 A
0.2
On-Resistance vs. Drain Current
5
= 1.8 V
= 10 V
V
SD
Q
g
I
− Source-to-Drain Voltage (V)
10
D
20
− Total Gate Charge (nC)
0.4
T
J
− Drain Current (A)
Gate Charge
= 150_C
15
30
0.6
20
40
0.8
T
J
= 25_C
V
V
GS
GS
= 2.5 V
= 4.5 V
25
50
1.0
30
60
1.2
New Product
6000
5000
4000
3000
2000
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
I
D
rss
−25
V
I
= 4.1 A
D
GS
= 12 A
V
V
1
4
= 4.5 V
GS
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
I
Vishay Siliconix
C
D
C
iss
oss
= 12 A
50
12
3
75
Si7983DP
100
www.vishay.com
16
4
125
150
20
5
3