SI7945DP Vishay, SI7945DP Datasheet - Page 3

• Manufacturer Part Number: SI7945DP
• Description: Dual P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72090
S-42322—Rev. C, 20-Dec-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
0.04
0.03
0.02
0.01
0.00
10
8
6
4
2
0
30
10
1
0
0.0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 10.9 A
0.2
10
On-Resistance vs. Drain Current
= 15 V
6
V
SD
Q
g
− Source-to-Drain Voltage (V)
I
0.4
− Total Gate Charge (nC)
D
20
− Drain Current (A)
T
Gate Charge
12
J
= 150_C
0.6
30
18
0.8
V
V
GS
GS
40
T
= 4.5 V
24
J
= 10 V
= 25_C
1.0
50
1.2
30
3500
3000
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
C
GS
= 10.9 A
rss
= 10 V
2
6
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
C
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
Vishay Siliconix
50
= 10.9 A
C
iss
18
6
75
Si7945DP
100
24
www.vishay.com
8
125
150
10
30
3