SI7411DN Vishay, SI7411DN Datasheet - Page 2

no-image

SI7411DN

Manufacturer Part Number
SI7411DN
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7411DN-T1-E3
Manufacturer:
VISHAY
Quantity:
4 788
Part Number:
SI7411DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7411DN-T1-E3
Quantity:
70 000
Part Number:
SI7411DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
8 265
Part Number:
SI7411DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7411DN-TI-E3
Manufacturer:
WASIN
Quantity:
4 123
Si7411DN
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltag
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
25
20
15
10
5
0
0
b
Parameter
a
1
V
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
2
a
J
= 25_C UNLESS OTHERWISE NOTED)
V
GS
3
= 5 thru 2 V
Symbol
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
4
SD
t
t
rr
fs
gs
gd
r
f
g
g
1 V
1.5 V
5
V
DS
I
V
D
DS
= −10 V, V
^ −1 A, V
I
V
V
F
V
= −20 V, V
V
V
V
GS
V
V
V
DS
DS
= −3.2 A, di/dt = 100 A/ms
GS
GS
I
DS
V
S
DS
DD
DD
Test Condition
DS
v −5 V, V
= −4.5 V, I
= −3.0 A, V
= −15 V, I
= V
= −2.5 V, I
= −1.8 V, I
= −20 V, V
= −10 V, R
= −10 V, R
= 0 V, V
GEN
GS
f = 1 MHz
GS
GS
, I
= −4.5 V, I
= −4.5 V, R
D
= 0 V, T
GS
D
GS
D
= −300 mA
D
D
GS
GS
= −11.4 A
L
L
= −11.4 A
= −9.9 A
= −2.9 A
= −4.5 V
= 10 W
= 10 W
= "8 V
= 0 V
= 0 V
J
D
= 85_C
= −11.4 A
g
30
25
20
15
10
= 6 W
5
0
0.0
0.5
V
GS
Min
−0.4
Transfer Characteristics
−30
25_C
− Gate-to-Source Voltage (V)
T
C
= 125_C
1.0
0.015
0.020
0.027
Typ
−0.8
135
3.9
35
27
23
45
70
29
7
5
S-51128—Rev. D, 13-Jun-05
Document Number: 72399
1.5
−55_C
"100
Max
0.019
0.025
0.034
−1.0
−1.2
200
105
−1
−5
41
35
70
50
2.0
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
W
2.5

Related parts for SI7411DN