SI7491DP Vishay, SI7491DP Datasheet - Page 3

• Manufacturer Part Number: SI7491DP
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72276
S-52554-Rev. B, 19-Dec-05
0.020
0.016
0.012
0.008
0.004
0.000
0.1
60
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 18 A
0.2
On-Resistance vs. Drain Current
= 15 V
10
13
V
SD
V
Q
T
GS
J
g
- Source-to-Drain Voltage (V)
= 150 °C
I
0.4
= 4.5 V
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
20
26
0.6
30
39
V
0.8
GS
T
J
= 25 °C
= 10 V
40
52
1.0
New Product
1.2
50
65
0.025
0.020
0.015
0.010
0.005
0.000
6500
5200
3900
2600
1300
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 18 A
C
rss
= 10 V
5
2
T
0
J
V
V
GS
DS
- Junction Temperature (°C)
10
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
C
I
50
D
oss
15
Vishay Siliconix
= 18 A
C
iss
75
6
Si7491DP
20
100
www.vishay.com
8
25
125
150
10
30
3